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| HIGH ISOLATION VOLTAGE HIGH COLLECTOR TO EMITTER VOLTAGE DARLINGTON TYPE 6 PIN OPTOCOUPLER FEATURES * HIGH ISOLATION VOLTAGE BV: 5 k Vr.m.s. MIN * HIGH COLLECTOR TO EMITTER VOLTAGE VCEO: 300 V MIN * ULTRA HIGH CURRENT TRANSFER RATIO CTR: 1000% MIN * HIGH SPEED SWITCHING tr,tf = 100 s TYP PS2633 PS2633L PS2634 PS2634L DESCRIPTION PS2633, PS2633L, PS2634, and PS2634L are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon Darlington-connected phototransistor. PS2633 and PS2634 are in a plastic DIP (Dual In-Line Package). PS2633L and PS2634L are lead bending type (Gull-wing) for surface mount. PS2633 and PS2633L have a base pin and PS2634 and PS2634L have no base pin. APPLICATIONS * TELEPHONE/TELEGRAPH LINE RECEIVER * POWER SUPPLY ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER SYMBOLS Diode VF IR C ICEO Transistor BVCEO BVEBO CTR VCE(sat) Coupled R1-2 C1-2 tr tf PARAMETERS Forward Voltage, IF = 10 mA Reverse Current, VR = 5 V Junction Capacitance, V = 0, f = 1.0 MHz Collector to Emitter Dark Current VCE = 300 V, IF = 0 Collector to Emitter Breakdown Voltage IC = 1 mA, IB = 0 Emitter to Base Breakdown Voltage1 IE = 100 A, IC = 0 Current Transfer Ratio, IF =1 mA, VCE = 2 V Collector Saturation Voltage, IF =1 mA, IC = 2 mA Isolation Resistance, Vin-out = 1.0 k VDC Isolation Capacitance, V = 0, f = 1.0 MHz Rise Time2, VCC = 5 V, IC = 10 mA Fall Time2, VCC = 5 V, IC = 10 mA UNITS V A pF nA V V % V pF s s 2. Test Circuit for Switching Time 10 11 PS2633, PS2633L, PS2634, PS2634L MIN TYP 1.15 30 400 300 6 1000 4000 15000 1.0 0.6 100 100 MAX 1.4 5 1. Only PS2633, PS2633L 6 5 4 6 5 4 PULSE INPUT 100 ( PW =Cycles 1/10 ) Duty = IF 2 50 4 1 5 VCC PULSE INPUT 100 ( PW =Cycles 1/10 ) Duty = IF 1 5 VCC Vout 1 2 PS2633 3 1 2 PS2634 3 RL = 100 6 2 50 4 Vout RL = 100 PS2633 PS2634 California Eastern Laboratories PS2633, PS2633L, PS2634, PS2634L ABSOLUTE MAXIMUM RATINGS1 (TA = 25C) SYMBOLS Diode VR IF PD IF (Peak) Transistor VCEO VEBO IC PC Coupled BV TSTG TOP PARAMETERS Reverse Voltage Forward Current (DC) Power Dissipation Peak Forward Current PW = 100 s, Duty Cycle 1% Collector to Emitter Voltage Emitter to Base Voltage2 Collector Current Power Dissipation Isolation Voltage3 Storage Temperature Operating Temperature UNITS V mA mW A RATINGS 6 80 150 1 V V mA mW Vr.m.s. C C 300 6 150 300 5000 -55 to +150 -55 to +100 Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Only PS2633, PS2633L 3. AC voltage for 1 minute at TA = 25 C, RH = 60 % between input (Pin No. 1, 2, 3 Common) and output (Pin No. 4, 5, 6 Common). OUTLINE DIMENSIONS (Units in mm) PS2633, PS2634 10.16 MAX 6 4 6 PS2633L, PS2634L 10.16 MAX 4 1 1 3.8 MAX 1 3 7.62 6.5 3.8 MAX 1 3 7.62 2.8 MIN 4.55 MAX 0.65 1.34 2.54 0.50 0.10 2.54 MAX 0 to 15 0.25 M 2.54 1.34 0.10 2.54 MAX 0.25 M 0.05 to 0.2 6.5 0.9 0.25 9.60 0.4 PIN CONNECTIONS (Top View) PS2633, PS2633L PS2634, PS2634L 6 5 4 1. 2. 3. 4. 5. 6. Anode Cathode NC Emitter Collector Base 6 5 4 1. 2. 3. 4. 5. 6. Anode Cathode NC Emitter Collector NC 1 2 3 1 2 3 PS2633, PS2633L, PS2634, PS2634L TYPICAL PERFORMANCE CURVES (TA = 25 C) DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE 200 TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE 400 150 Transistor Power Dissipation, PC (mW) 25 50 75 100 Diode Power Dissipation, PD (mW) 300 100 200 50 100 0 0 25 50 75 100 Ambient Temperature, TA (C) FORWARD CURRENT vs. FORWARD VOLTAGE 100 TA = 100 C 75 C 50 C 10 25 C 0 C -25 C -55 C 160 140 Ambient Temperature, TA (C) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 5.0 mA Collector Current, IC (mA) Forward Current, IF (mA) 4.5 mA 4.0 mA 4.0 mA 3.5 mA mA 3.0 mA 2.5 A 2.0 m 120 100 80 60 1 1.5 m A 1.0 mA 40 20 0.1 IF = 0.5 mA 1 2 3 4 5 6 7 8 0.01 0.6 0.8 1.0 1.2 1.4 1.6 0 Forward Voltage, VF (V) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE Collector to Emitter Dark Current, ICEO (nA) 10 VCE = 300 V 1 100 300 Collector to Emitter Voltage, VCE (V) COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 5.0 mA 2.0 mA 2.0 mA Collector Current, IC (mA) 50 100 n 10 5 IF = 0.5 mA 10 n 1 0.5 1n 100 p -50 0.1 -25 0 25 50 75 100 0 0.2 0.4 0.6 0.8 1.0 1.2 Ambient Temperature, TA (C) Collector Saturation Voltage, VCE(sat) (V) PS2633, PS2633L, PS2634, PS2634L TYPICAL PERFORMANCE CURVES (TA = 25 C) NORMALIZED OUTPUT CURRENT vs. AMBIENT TEMPERATURE 1.2 CURRENT TRANSFER RATIO (CTR) vs. FORWARD CURRENT 5000 VCE = 2 V CTR, Normalized Output Current Current Transfer Ratio, CTR (%) 1.0 Sample A 4000 Sample B 0.8 3000 0.6 2000 0.4 Normalized to 1.0 at TA = 25 C IF = 1 mA, VCE = 2 V 1000 0.2 0 -50 -25 0 25 50 75 100 0 0.1 0.5 1 5 10 20 Ambient Temperature, TA (C) SWITCHING TIME vs. LOAD RESISTANCE 300 VCC = 10 V, IC = 10 mA Pulse Width = 5 ms Duty Cycle = 1/2 tr Forward Current, IF (mA) FREQUENCY RESPONSE 100 0 10 100 Switching Time, t (s) 50 td Voltage Gain, AV (dB) -5 -10 tf 10 1 k -15 -20 -25 -30 0.01 VCE = 4 V, IC = 10 mA VIN = 0.1 VP-P 1 k 1 F VIN 47 RL VOUT 0.1 1 10 100 5 ts 1 20 50 100 500 1k 2k Load Resistance, RL () Frequency, f (kHz) CTR DEGRADATION 1.2 IF = 1 mA 1.0 CTR, Normalized TA = 25 C 0.8 TA = 60 C 0.6 0.4 0.2 0 10 102 103 104 105 106 Time (HR) EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) * Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -3/98 DATA SUBJECT TO CHANGE WITHOUT NOTICE |
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